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GSD1616A

GTM

NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2003/10/23 REVISED DATE :2004/11/29B GSD1616A Description Package Dimensions D E N P ...


GTM

GSD1616A

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www.DataSheet4U.com ISSUED DATE :2003/10/23 REVISED DATE :2004/11/29B GSD1616A Description Package Dimensions D E N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSD1616A is designed for audio frequency power amplifier and medium speed switching. S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Ta = 25 Parameter Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation VCBO VCEO VEBO IC IC Tj TsTG PD 120 60 6 1 2 +150 -55 ~ +150 750 V V V A A mW Characteristics at Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) *hFE1 *hFE2 fT Cob ton ts tf Min. 120 60 6 600 135 81 100 Typ. 150 0.9 640 160 0.07 0.95 0.07 Max. 100 100 300 1.2 700 600 19 Unit V V V nA nA mV mV mV Test Conditions IC=100uA IC=1mA IE=10uA VBE=60V VBE=6V lC=1A,IB=50mA IC=1A, IB=50mA VCE=2V,IC=50mA VCE=2V,IC=100mA VCE=2V,IC=1A VCE=2V,IC=100mA VCB=10V ,IE=0,f=1MHz VCE=10V,IC=100mA IB1=-IB2=10mA VBE(off)=2~-3V *Pulse Test: Pulse Width 380us, Duty Cycle 2% MHz pF uS uS uS Classification of hFE1 Rank Range Y 135-270 G 200-400 L 300-600 GSD1616A Page: 1/3 ISSUED DATE :2003/10/23 REVISED DATE :2004/11/29B Characteristics Curve GS...




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