GS9015

GS9015 New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) TO-226AA (TO-92) 0.181 (4.6) 0.142 (3.6) min.0.492 (12.5) 0.181 (4.6) max. ∅ 0.022 (0.55) 0.098 (2.5) Bottom View Dimensions in inches and (millimeters) Features PNP Silicon Epitaxial Planar Transistors Complementary to GS9014 Low frequency, low noise amplifier Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk-5K per container, 20K per box E7/4K per Ammo mag., 20K per box Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified Parameter Symbol Value Unit Collector-Base Voltage VCBO –50 V Collector-Emitter Voltage VCEO –45 V Emitter-Base Voltage VEBO –5 V Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air IC Ptot RθJA –100 450(1) 250(1) mA mW °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case Document Number 88198 10-May-02 www.vishay.com 1 GS9015 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition DC Current Gain Current Gain Group A B C hFE VCE = –5V, IC = –1mA Collector-Emitter Breakdown Voltage V(BR)CEO IC = –1mA, IB = 0 Collector-Base Breakdown Voltage V(BR...