GS66502B, GS66504B 650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
Features – 650V enhancement mode power s...
GS66502B, GS66504B 650V enhancement mode GaN transistors
PRELIMINARY DATASHEET
Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Zero reverse recovery loss – RoHS 6 compliant
Applications – On-board battery chargers – Appliance and motor inverters and IPMs – AC-DC power supplies (PFC & primary) – VHF small form factor power adapters – High frequency, high efficiency power conversion
top view
D
GS
Absolute Maximum Ratings (Tcase = 25˚C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source
Voltage Gate-to-Source
Voltage
Continuous Drain Current (Tcase=25°C) Continuous Drain Current (Tcase=100°C) Pulsed Drain Current (Tcase=25°C)
Thermal Characteristics (Typical values unless otherwise noted) Parameters
Thermal Resistance (junction to case) Maximum Soldering Temperature (MSL3 rated)
Sy...