GP201MHS18 Datasheet
Part Number |
GP201MHS18 |
Manufacturers |
Dynex Semiconductor |
Logo |
|
Description |
Low VCE(SAT) Half Bridge IGBT Module |
Datasheet |
GP201MHS18 Datasheet (PDF) |
GP201MHS18
GP201MHS18
Low VCE(SAT) Half Bridge IGBT Module
DS5290-2.1 January 2001
FEATURES
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 200A 400A
APPLICATIONS
s s s s
11(C2) 1(E1C2) 2(E2)
6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
9(C1)
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The modu.
Low VCE(SAT) Half Bridge IGBT Module
GP201MHS18
GP201MHS18
Low VCE(SAT) Half Bridge IGBT Module
DS5290-2.1 January 2001
FEATURES
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 200A 400A
APPLICATIONS
s s s s
11(C2) 1(E1C2) 2(E2)
6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
9(C1)
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
11 10 8 9
Fig. 1 Half bridge circuit diagram
1
2
3
6 7 5 4
ORDERING INFORMATION
Order As: GP201MHS18 Note: When ordering, please use the complete part number.
Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to .
2005-03-23 : 2N2857CSM 2N2880 2N2891 2N2894 2N2894 2N2894 2N2894A 2N2894ACSM 2N2894CSM 2N2894DCSM