GP200MHS12 Datasheet
Part Number |
GP200MHS12 |
Manufacturers |
Dynex Semiconductor |
Logo |
|
Description |
Half Bridge IGBT Module |
Datasheet |
GP200MHS12 Datasheet (PDF) |
GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters
11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
9(C1)
The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layout.
Part Number |
GP200MHS18 |
Manufacturers |
Dynex Semiconductor |
Logo |
|
Description |
Half Bridge IGBT Module |
Datasheet |
GP200MHS18 Datasheet (PDF) |
GP200MHS18
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
FEATURES
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 200A 400A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters
11(C2) 1(E1C2) 2(E2)
6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
9(C1)
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (.
Half Bridge IGBT Module
GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7V 200A 400A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters
11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
9(C1)
The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As: GP200MHS12 Note: When ordering, please use the whole part number.
8 9 5 4 11 10 1 2 3 6 7
Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
GP200MHS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
S.
2005-03-23 : 2N2857CSM 2N2880 2N2891 2N2894 2N2894 2N2894 2N2894A 2N2894ACSM 2N2894CSM 2N2894DCSM