www.DataSheet4U.com
MICROELECTRONICS
A
A
Power Discrete GMR10H60C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
DESCRIPTION
Dual center tap schottky rectifier designed for high frequency Switched Mode Supplies. Power
Major Ratings and Characteristics
Characteristics IF(AV) Rectangular waveform VRRM VF @5 Apk, T C= 125°C (per leg) Values 2X5 60 0.65 -45 ~ +150 Unit A V V °C
FEATURES
High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage curr.
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
www.DataSheet4U.com
MICROELECTRONICS
A
A
Power Discrete GMR10H60C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
DESCRIPTION
Dual center tap schottky rectifier designed for high frequency Switched Mode Supplies. Power
Major Ratings and Characteristics
Characteristics IF(AV) Rectangular waveform VRRM VF @5 Apk, T C= 125°C (per leg) Values 2X5 60 0.65 -45 ~ +150 Unit A V V °C
FEATURES
High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current
TJ range
TO-220AB
Base Common Cathode
2
1
2
3
Anode
Common Cathode
2
Anode
1
3
TO-220FPAB
1
2
3
Anode
Common Cathode
2
Anode
1
3
www.gammamicro.com.tw
GMR10H60C V0.1
1
MICROELECTRONICS
A
A
Power Discrete GMR10H60C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MARKING INFORMATION
TO - 220AB
10H60C
AYW W
A : Assembly Location Y : Year WW : Weekly
ORDERING INFORMATION
Ordering Number Package Shipping
GMR10H60CTB3T GMR10H60CTBF3T
TO - 220AB TO - 220FPAB
50 Units/ Tube 50 Units/ Tube
* For detail Ordering Number identification, please see last page.
ABSOLUTE RATINGS (TC = 25°C)
Symbol VRRM IF(AV) Parameter Repetitive peak reverse voltage Maximum average forward rectified current per diode per device Value 60 5 10 150 -45 to + 150 Unit V A
IFSM Tj, Tstg
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per leg. (Non-Repetitive) Operating junction temperature and storage temperature
A °C
Thermal Characteristics (TC = 25°C un.