GM8050
Description Package Dimensions
1/2 N P N E P I TA X I A L T R A N S I S T O R
The GM8050 is designed for general purpose amplifier applications.
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A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to E.
NPN EPITAXIAL TRANSISTOR
GM8050
Description Package Dimensions
1/2 N P N E P I TA X I A L T R A N S I S T O R
The GM8050 is designed for general purpose amplifier applications.
www.DataSheet4U.com
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current IB Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55 ~ +150 40 25 6 1.5 0.5 1 V V V A A W Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Hfe1 Hfe2 Hfe3 fT
at Ta = 25
Min. 40 25 6 45 120 40 100 Typ. Max. 100 100 0.5 1.2 1 500 MHz Unit V V V nA nA V V V IC=100uA IC=2mA IE=100uA VCB=35V VEB=6V IC=0.8A, IB=80mA IC=0.8A, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA Test Conditions
Classification Of hFE
Rank hFE C 120-200 D 160 - 300 E 250 - 500
2/2
Characteristics Curve
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