GM2310

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A The GM2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GM2310 is universally used for all commercial-industrial surface mount applications. Description Features *Simple Drive Requirement *Small Package Outline Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, [email protected] 3 Continuous Drain Current , [email protected] 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 60 ±20 3.0 2.3 10 1.5 0.01 -55 ~ +150 Value 83.3 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GM2310 Page: 1/4 www.DataSheet4U.com ISSUED DATE :2006/01/20 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 60 1.0 Typ. 0.05 5.0 6 1.6 3 6 5 16 3 490 55 40 Max. 3.0 ±100 10 25...