GM156

www.DataSheet.co.kr CORPORATION GM156 Description Features The GM156 is designed for general purpose switching and amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage ISSUED DATE :2006/03/02 REVISED DATE : NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Min. 80 60 5 70 100 80 40 140 Typ. 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 80 60 5 3 6 1.2 Unit V V V A A W Electrical Characteristics (Ta = 25 BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob ton toff , unless otherwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=10mA, IB=0 V IE=100uA, IC=0 100 nA VCB=60V, IE=0 100 nA VEB=4V, IC=0 0.3 V IC=1A, IB=0.1A 0.6 V IC=3A, IB=0.3A 1.25 V IC=1A, IB=0.1A 1.0 V IC=1A, VCE=2V VCE=2V, IC=50mA 300 VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A MHz VCE=5V, IC=100mA, f=100MHz 30 pF VCB=10V, f=1MHz ns VCC=10V, IC=500mA, IB1=IB2=50mA 2% *Measured under pulse ...