GM1188

www.DataSheet4U.com CORPORATION G M 11 8 8 Description Features PNP SILICON EPITAXIAL TRANSISTOR The GM1188 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) Complementary pair with GM1766 ISSUED DATE :2005/07/19 REVISED DATE :2005/10/19B Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -40 -32 -5 -2 0.5 (2.0*) Unit V V V A W *When mounted on a 40x40x0.7mm ceramic board. Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -500 150 50 ,unless otherwise noted) Max. Unit Test Conditions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 -1 uA VCB=-20V, IE=0 -1 uA VEB=-4V, IC=0 -800 mV IC=-2A, IB=-200mA 390 VCE=-3V, IC=-500mA MHz VCE=-5V, IC=-500mA, f=30MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range P 82 ~ 180 Q 120 ~ 270 R 180 ~ 390 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/07/19 REVISED DATE :2005/10/19B Important Notice: All ...