GL9435

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/18 REVISED DATE : GL9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m -6A The GL9435 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 25 -6.0 -4.8 -20 2.7 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 45 Unit /W GL9435 Page: 1/4 ISSUED DATE :2005/02/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 Typ. -0.02 10 9.2 2.8 5.2 11 8 25 17 507 222 158 Max. -3.0 100 -1 -25 50 100 16 912 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-25...