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GL158 Datasheet

Part Number GL158
Manufacturers GTM
Logo GTM
Description NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL158 DatasheetGL158 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL158 Description Features ISSUED DATE :2005/09/28 REVISED DATE :2005/12/09B NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL158 is designed for general purpose switching and amplifier applications. 6 Amps continuous current, up to 20Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF..

  GL158   GL158






Part Number GL15T
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Low Capacitance ESD Protection Diodes
Datasheet GL158 DatasheetGL15T Datasheet (PDF)

www.DataSheet.co.kr GL05T to GL24T www.vishay.com Vishay Semiconductors Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES 3 • IEC 61000-4-5 (lightning) see IPPM below • ESD-protection acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge 1 2 17416 • Small package for use in portable electronics 20512 • Space saving SOT-23 package 1 MARKING (example only) • High temperature soldering 260 °C/10 s at terminals guaranteed: XX XX YYY • Low capaci.

  GL158   GL158







Part Number GL159
Manufacturers GTM
Logo GTM
Description PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL158 DatasheetGL159 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL159 Description Features ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL159 is designed for general purpose switching and amplifier applications. 5 Amps continuous current, up to 15Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF..

  GL158   GL158







Part Number GL157
Manufacturers GTM
Logo GTM
Description PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL158 DatasheetGL157 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL157 Description Features ISSUED DATE :2005/07/15 REVISED DATE :2005/08/02B PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL157 is designed for general purpose switching and amplifier applications. -60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30.

  GL158   GL158







Part Number GL156
Manufacturers GTM
Logo GTM
Description NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL158 DatasheetGL156 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL156 Description Features ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL156 is designed for general purpose switching and amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.

  GL158   GL158







NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

www.DataSheet4U.com CORPORATION GL158 Description Features ISSUED DATE :2005/09/28 REVISED DATE :2005/12/09B NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL158 is designed for general purpose switching and amplifier applications. 6 Amps continuous current, up to 20Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 150 60 6 6 20 3 Unit V V V A A W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Min. 150 60 6 100 100 75 25 Typ. 200 130 ,unless otherwise stated) Max. Unit Test Conditions V IC=100uA , IE=0 V IC=10mA, IB=0 V IE=100uA ,IC=0 50 nA VCB=120V, IE=0 50 nA VCES=60V 10 nA VEB=6V, IC=0 50 mV IC=100mA, IB=5mA 100 mV IC=1A, IB=50mA 170 m.


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