GL157

www.DataSheet4U.com CORPORATION GL157 Description Features ISSUED DATE :2005/07/15 REVISED DATE :2005/08/02B PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL157 is designed for general purpose switching and amplifier applications. -60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -80 -60 -5 -3 -6 2 Unit V V V A A W Electrical Characteristics(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob ton toff Min. -80 -60 -5 70 100 80 40 100 Typ. -150 -450 -0.9 -0.8 200 200 170 150 140 40 450 ,unless otherwise noted) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 -100 nA VCB=-60V, IE=0 -100 nA VEB=-4V, IC=0 -300 mV IC=-1A, IB=-100mA -600 mV IC=-3A, IB=-300mA -1.25 V IC=-1A, IB=-100mA -1.0 V VCE=-2V, IC=-1A VCE=-2V, IC=-50mA 300 VCE=-2V, IC=-500mA VCE=-2V, IC=-1A VCE=-2V, IC=-2A MHz VCE=-5V, IC=-100mA, f=100MHz 30 pF VCB=-10V, IE=0, f=1MHz n...