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GL156 Datasheet

Part Number GL156
Manufacturers GTM
Logo GTM
Description NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL156 DatasheetGL156 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL156 Description Features ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL156 is designed for general purpose switching and amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.

  GL156   GL156






Part Number GL15T
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Low Capacitance ESD Protection Diodes
Datasheet GL156 DatasheetGL15T Datasheet (PDF)

www.DataSheet.co.kr GL05T to GL24T www.vishay.com Vishay Semiconductors Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES 3 • IEC 61000-4-5 (lightning) see IPPM below • ESD-protection acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge 1 2 17416 • Small package for use in portable electronics 20512 • Space saving SOT-23 package 1 MARKING (example only) • High temperature soldering 260 °C/10 s at terminals guaranteed: XX XX YYY • Low capaci.

  GL156   GL156







Part Number GL159
Manufacturers GTM
Logo GTM
Description PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL156 DatasheetGL159 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL159 Description Features ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL159 is designed for general purpose switching and amplifier applications. 5 Amps continuous current, up to 15Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF..

  GL156   GL156







Part Number GL158
Manufacturers GTM
Logo GTM
Description NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL156 DatasheetGL158 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL158 Description Features ISSUED DATE :2005/09/28 REVISED DATE :2005/12/09B NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL158 is designed for general purpose switching and amplifier applications. 6 Amps continuous current, up to 20Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF..

  GL156   GL156







Part Number GL157
Manufacturers GTM
Logo GTM
Description PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Datasheet GL156 DatasheetGL157 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL157 Description Features ISSUED DATE :2005/07/15 REVISED DATE :2005/08/02B PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL157 is designed for general purpose switching and amplifier applications. -60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30.

  GL156   GL156







NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

www.DataSheet4U.com CORPORATION GL156 Description Features ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL156 is designed for general purpose switching and amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT ton toff Cob Min. 80 60 5 70 100 80 40 140 Typ. 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 80 60 5 3 6 2 Unit V V V A A W Electrical Characteristics(Ta = 25 ,unless otherwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=10mA, IB=0 V IE=100uA, IC=0 100 nA VCB=60V, IE=0 100 nA VEB=4V, IC=0 0.3 V IC=1A, IB=0.1A 0.6 V IC=3A, IB=0.3A 1.25 V IC=1A, IB=0.1A 1.0 V IC=1A, VCE=2V VCE=2V, IC=50mA 300 VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A MHz VCE=5V, IC=100mA, f=100MHz ns VCC=10V, IC=500mA, IB1=IB2=50mA 30 pF VCB=10V, f=1MHz 2% *Measured under p.


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