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GJ8550 Datasheet

Part Number GJ8550
Manufacturers GTM
Logo GTM
Description PNP EPITAXIAL TRANSISTOR
Datasheet GJ8550 DatasheetGJ8550 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GJ8550 Description Features PNP EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8050 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.

  GJ8550   GJ8550






PNP EPITAXIAL TRANSISTOR

www.DataSheet4U.com CORPORATION GJ8550 Description Features PNP EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8050 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1.25 Unit V V V A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 , unless otherwise specified) Max. Unit Test Conditions V IC=-100uA V IC=-2mA V IE=-100uA -100 nA VCB=-35V -100 nA VBE=-6V -0.5 V lC=-800mA, IB=-80mA -1.2 V lC=-800mA, IB=-80mA -1 V VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA 500 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA MHz VCE=-10V, IC=-50mA, f=100MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE2 Rank Range C 120 ~ 200 D 160 ~ 300 E 250.


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