www.DataSheet4U.com
CORPORATION
GJ8550
Description Features
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8050
Package Dimensions
TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.
PNP EPITAXIAL TRANSISTOR
www.DataSheet4U.com
CORPORATION
GJ8550
Description Features
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8050
Package Dimensions
TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation
, unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1.25
Unit V V V A A
W
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9
, unless otherwise specified) Max. Unit Test Conditions V IC=-100uA V IC=-2mA V IE=-100uA -100 nA VCB=-35V -100 nA VBE=-6V -0.5 V lC=-800mA, IB=-80mA -1.2 V lC=-800mA, IB=-80mA -1 V VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA 500 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA MHz VCE=-10V, IC=-50mA, f=100MHz pF VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE2
Rank Range
C 120 ~ 200
D 160 ~ 300
E 250.