GJ1386

www.DataSheet4U.com ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 Description Features P NP EP ITAX I AL S ILI CO N T RANSI STOR The GJ1386 is designed for low frequency applications. Low VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent DC current gain characteristics Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current *Collector Current (Pulse) Total Power Dissipation (TC=25 ) Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -30 -20 -6 -5 -10 20 Unit V V V A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -30 -20 -6 82 Typ. 120 60 ) Max. -500 -500 -1 580 Unit V V V nA nA V MHz pF Test Conditions IC=-50uA , IE=0 IC=-1mA, IB=0 IE=-50uA ,IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 E 370 - 580 GJ1386 Page: 1/2 ISSUED DATE :2005/07/25 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or i...