GJ1202

www.DataSheet4U.com ISSUED DATE :2005/06/07 REVISED DATE : GJ1202 Description Features PNP EPITAXIAL PLANAR SILICON TRANSISTOR The GJ1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications. *Large current capacitance and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Junction Temperature Storage Temperature Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO -60 VCEO -50 VEBO -6 IC -3 ICP -6 Tj +150 TsTG -55 ~ +150 PD 1 15 PD(TC=25 ) ) Unit Test Conditions Unit V V V A A W W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(sat) *hFE1 *hFE2 fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) -60 -50 -6 100 35 - -0.35 -0.94 150 39 70 450 35 -1 -1 -0.7 -1.2 560 - V V V uA uA V V MHz pF ns ns ns IC=-10uA, IE=0 IC=-1mA, RBE= IE=-10uA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 lC=-2A, IB=-100mA lC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-3A VCE=-10V, IC=-50mA VCB=-10V, f=1MHz See specified test ci...