GJ09N20

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GJ09N20 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications at power dissipation levels to approximately 50 watts. Description Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 200 ±30 8.6 5.5 36 69 0.55 40 8.6 -55 ~ +150 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.8 110 Unit /W /W GJ09N20 Page: 1/4 ISSUED DATE :2005/06/27 REVISED DATE : Electr...