GI9960

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/12/21 REVISED DATE : GI9960 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 16m 42A Description The GI9960 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Low Gate Charge *Fast Switching Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 40 ±20 42 26 195 45 -55 ~ +150 0.36 Unit V V A A A W W/ Total Power Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W GI9960 Page: 1/4 ISSUED DATE :2004/12/21 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 40 1.0 Typ. 0.032 30 18 6 12 9 110 23 10 1500 250 180 Max. 3.0 ±100 1 25 16 25 pF ns nC Unit V V/ V S nA uA uA m Test Condition...