www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GI85T 03
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6m 75A
The GI85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Req.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GI85T 03
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6m 75A
The GI85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant
Features
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 30 ±20 75 55 350 107 0.7 -55 ~ +175
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.4 110 Unit /W /W
GI85T03
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ISSUED DATE :2005/11/24 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi.