GI3669

www.DataSheet4U.com ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B GI3669 Description Package Dimensions NPN EPITAXIAL PLANAR T RANSISTOR The GI3669 is designed for using in power amplifier applications, power switching applications. TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation (TA=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings 80 80 5 2 1.25 150 -55 ~ +150 Unit V V V A W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) Min. 80 80 5 70 40 Typ. 0.15 0.9 100 30 0.2 1.0 0.2 unless otherwise noted) Max. 1 1 0.5 1.2 240 Unit V V V uA uA V V IC=100uA, IE=0 IC=10mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=0.5A VCE=2V, IC=1.5A VCE=2V, IE=500mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30V, RL=30 , IC=1A, IB1=-IB2=50mA, Duty Cycle 1% *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions MHz pF us us us Classification Of hFE1 Rank Range O 70 ~ 140 Y 120 ~ 240 GI3669 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B Characteristi...