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GI1386

GTM
Part Number GI1386
Manufacturer GTM
Description PNP EPITAXIAL SILICON TRANSISTOR
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com ISSUED DATE :2005/07/25 REVISED DATE : GI1386 Description Features PNP EPITAXIAL SILICON TRANSISTO...
Datasheet PDF File GI1386 PDF File

GI1386
GI1386

Overview
www.
DataSheet4U.
com ISSUED DATE :2005/07/25 REVISED DATE : GI1386 Description Features PNP EPITAXIAL SILICON TRANSISTOR The GI1386 is designed for low frequency applications.
Low VCE(sat) =-0.
55V(Typ.
) (IC/IB=-4A/-0.
1A) Excellent DC current gain characteristics Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current *Collector Current (Pu...


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