GFU30N03

GFU30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 (IPAK) E 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) D TM G G www.DataSheet4U.com 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) S D Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters and motor drives Fast Switching for High Efficiency 0.245 (6.22) 0.235 (5.97) G S Mechanical Data 0.375 (9.53) 0.350 (8.89) Case: JEDEC TO-251 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g 0.035 (0.89) 0.028 (0.71) 0.102 (2.59) 0.078 (1.98) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 20 Unit V 43 80 44.5 17.8 –55 to 150 2.8 125 A W °C °C/W Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance RθJA Note: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB moun...