GE28F640K3

Intel StrataFlash® Synchronous Memory (K3/K18) 28F640K3, 28F640K18, 28F128K3, 28F128K18, 28F256K3, 28F256K18 (x16) Datasheet m o .c U 4 t e e h S a t a .D w w w ■ ■ ■ Product Features Performance — 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities — 25 ns Asynchronous Page-Mode Reads, 8 Words Wide — 13 ns Synchronous Burst-Mode Reads, 8 or 16 Words Wide — 32-Word Write Buffer — Buffered Enhanced Factory Programming Software — 25 µs (typ.) Program and Erase Suspend Latency Time — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible — Programmable WAIT Signal Polarity Quality and Reliability — Operating Temperature: –40 °C to +85 °C — 100K Minimum Erase Cycles per Block — 0.18 µm ETOX™ VII Process ■ ■ ■ Architecture — Multi-Level Cell Technology: High Density at Low Cost — Symmetrical 64 K-Word Blocks — 256 Mbit (256 Blocks) — 128 Mbit (128 Blocks) — 64 Mbit (64 Blocks) — Ideal for “CODE + DATA” applications Security — 2-Kbit Protection Register — Unique 64-bit Device Identifier — Absolute Data Protection with VPEN and WP# — Individual and Instantaneous Block Locking, Unlocking and Lock-Down Capability Packaging and Voltage — 64-Ball Intel® Easy BGA Package (128-Mbit is also offered in a lead-free package) — 56-and 79-Ball Intel® VF BGA Package — VCC = 2.70 V to 3.60 V — VCCQ = 1.65 to 1.95 V/2.375 to 3.60 V The Intel StrataFlash® Synchronous Memory (K3/K18) product line adds a high performance burst-mode interface and other additional f...