www.DataSheet4U.com
ISSUED DATE :2004/09/20 REVISED DATE :
GD751SD
Description
S U R F A C E M O U N T, S C H O T T K ...
www.DataSheet4U.com
ISSUED DATE :2004/09/20 REVISED DATE :
GD751SD
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A
Package Dimensions
The GD751SD is designed for high speed switching for detection and high reliability.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse
Voltage Maximum RMS
Voltage Maximum DC Blocking
Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation
Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD
Ratings +125 -40 ~ +125 40 28 40 0.2 2.0 0.03 225
Unit
V V V A pF A mW
Characteristics
at Ta = 25
Symbol VF IR Max 0.37 0.5 Unit V uA Test Condition IF = 1mA VR = 30V
Characteristics Maximum Instantaneous Forward
Voltage Maximum Average Reverse Current 2. ESD sensitive product handling required.
Notes: 1. Measured at 1.0 MHz and applied reverse
voltage of 1.0 volt.
1/2
ISSUED DATE :2004/09/20 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semicondu...