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GD1SS355

GTM

SWITCHING DIODE

www.DataSheet4U.com ISSUED DATE :2004/09/20 REVISED DATE : GD1SS355 Description S U R F A C E M O U N T, S W I T C H I...


GTM

GD1SS355

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Description
www.DataSheet4U.com ISSUED DATE :2004/09/20 REVISED DATE : GD1SS355 Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 9 0 V, C U R R E N T 0 . 1 A The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current handling capability. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note2) Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRMS VDC IFSM CJ TRR Io PD Ratings +125 -55 ~ +125 90 63 80 0.5 3.0 4.0 0.1 225 Unit V V V A pF nSec A mW Characteristics at Ta = 25 Symbol VF IR Max 1.20 0.1 Unit V uA Test Condition IF = 100mA VR = 80V Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt. 2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt. 3. ESD sensitive product handling required. 1/2 ISSUED DATE :2004/09/20 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in wh...




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