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ISSUED DATE :2005/01/10 REVISED DATE :
GD103SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 3 5 0 m A
Description
Package Dimensions
The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time and low reverse capacitance.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millime.
SWITCHING DIODE
www.DataSheet4U.com
ISSUED DATE :2005/01/10 REVISED DATE :
GD103SD
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 3 5 0 m A
Description
Package Dimensions
The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time and low reverse capacitance.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Storage Temperature Peak Repetitive Reverse Voltage RMS Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current(t 1.0s) Thermal Resistance Junction to Ambient Total Power Dissipation at Ta = 25 Symbol Tstg VR VR(RMS) IF IFRM R
JA
Ratings -65 ~ +125 40 28 350 1.5 625 225
Unit V V mA A /W mW
PD
Characteristics at Ta = 25
Parameter Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF(1) VF(2) IR CT Trr Min. 40 Typ. 5.0 10 Max. 370 600 5.0 Unit V mV mV A pF ns IR=10 A IF=20mA IF=200mA VR=30V VR=0V, f=1MHz IF=IR=200mA, IR(Rec)=20mA, RL=100 Test Conditions
1/2
ISSUED DATE :2005/01/10 REVISED DATE :
Characteristics Curve
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