GBC546

www.DataSheet4U.com ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B GBC546 Description Features NPN SILICON TRANSISTOR The GBC546 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC556 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25 Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Ratings 80 65 6 100 625 5.0 1.5 12 -55 ~ +150 200 83.3 Unit V V V mA mW mW/ W mW/ /W /W Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICES *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on)1 *VBE(on)2 *hFE fT Cob Min. 80 65 6 0.55 110 150 Typ. 0.09 0.2 0.7 300 1.7 unless otherwise noted) Max. 15 0.25 0.6 0.7 0.77 800 4.5 Unit V V V nA V V V V V MHz pF Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCE=70V, VBE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MH...