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G B AT 5 4 / A / C / S
Description
Silicon Schottky Barrier Double Diodes .
1/2
Package Dimension...
www.DataSheet4U.com
G B AT 5 4 / A / C / S
Description
Silicon Schottky Barrier Double Diodes .
1/2
Package Dimensions
REF. A B C D E F
Min. 2.70 2.40 1.40 0.35 0 0.45
Millimeter
Max. 3.10 2.80 1.60 0.50 0.10 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Style : Pin 1.Anode 2.Cathode 3.Common Connection Symbol Tj Tstg Ratings +125 -65 ~ +125 30 200 300 600 PD 230 V mA mA mA mW Unit
Absolute Maximum Ratings
Parameter Junction Temperature Storage Temperature Repetitive Peak Reverse
Voltage Forward Continuous Current Repetitive Peak Forward Current Surge Forward Current Total Power Dissipation at Ta = 25
Characteristics
characteristics
at Ta = 25
Symbol V(BR)R VF(1) VF(2) Min 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF ns IR=10uA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA, RL=100 measured at IR=1mA Test Conditions
Reverse breakdown
voltage
Forward
Voltage
VF(3) VF(4) VF(5) IR CT Trr
Reverse Current Total Capacitance Reverse Recover Time
2/2
Characteristics Curve
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