GAP05SLT80-CAL

Silicon Carbide Power Schottky Diode Features  8000 V Silicon Carbide Schottky rectifier  175 °C maximum operating temperature  Positive temperature coefficient of VF  Extremely fast switching speeds  Superior figure of merit QC/IF Advantages  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Low reverse leakage current at operating temperature Die Datasheet GAP05SLT80-CAL VRRM IF QC = 8000 V = 50 mA = 8 nC Die Size = 2.4 mm x 2.4 mm Applications  Down Hole Oil Drilling, Geothermal Instrumentation  High Voltage Multipliers  Military Power Supplies Electrical Specifications Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Power dissipation Operating and storage temperature Electrical Characteristics Parameter Diode forward voltage Reverse current Total capacitive charge Total capacitance Symbol VRRM IF IF(RMS) Ptot Tj , Tstg Conditions TC = 25 °C Values 8000 50 87 0.2 -55 to 175 Unit V mA mA W °C Symbol VF IR QC C Conditions IF = 50 mA, Tj = 25 °C IF = 50 mA, Tj = 175 °C VR = 8000 V, Tj = 25 °C VR = 8000 V, Tj = 125 °C VR = 1000 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 4.6 12 3.8 5.3 8 25 8 6 max. Unit V µA nC pF Feb 2015 http://www.genesicsemi....