GA100SICP12-227

GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Optional Gate Return Pin Exceptional Safe Operating Area Integrated SiC Schottky Rectifier Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode Advantages Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth Reduced cooling requirements Reduced system size VDS = 1200 V RDS(ON) = 10 mΩ ID (@ 25°C) = 160 A ID (@ 115°C) = 100 A Package hFE (@ 25°C) = 85 RoHS Compliant G D GR S Isolated Baseplate SOT-227 Applications D G Pin D - Drain Pin S - Source GR Pin GR - Gate Retu...