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GA080TH65

GeneSiC

Silicon Carbide Thyristor

Silicon Carbide Thyristor Features • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compac...


GeneSiC

GA080TH65

File Download Download GA080TH65 Datasheet


Description
Silicon Carbide Thyristor Features 6500 V Asymmetric SiC NPNP Thyristor 150 °C operating temperature Robust compact fully soldered package SOT-227 (ISOTOP) base plate form factor Fast turn on characteristics Lowest in class Qrr/IT(AVM) Applications Grid Tied Solar Inverters Wind Power Inverters HVDC Power Conversion Utility Scale Power Conversion Trigger Circuits/Ignition Circuits Maximum Ratings Parameter Repetitive peak forward voltage Repetitive peak reverse voltage Maximum average on-state current RMS on-state current Non-repetitive peak on-state current Power dissipation Operating and storage temperature Electrical Characteristics Parameter Maximum peak on state voltage Anode-cathode threshold voltage Anode-cathode slope resistance Leakage current Gate trigger current Holding current Rise time Delay time Reverse recovery charge Recovered charge, 50% chord Reverse recovery current Circuit commutated turn-off time Thermal Characteristics ...




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