www.DataSheet4U.com
HGTG30N60C3D
Data Sheet January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT with ...
www.DataSheet4U.com
HGTG30N60C3D
Data Sheet January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high
voltage switching device combining the best features of
MOSFETs and bipolar transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high
voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
63A, 600V at TC = 25oC Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND G30N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,7...