DatasheetsPDF.com

G30N60 Datasheet

Part Number G30N60
Manufacturers ETC
Logo ETC
Description Fast IGBT
Datasheet G30N60 DatasheetG30N60 Datasheet (PDF)

SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete.

  G30N60   G30N60






Part Number G30N60HS
Manufacturers Infineon
Logo Infineon
Description High Speed IGBT
Datasheet G30N60 DatasheetG30N60HS Datasheet (PDF)

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target application.

  G30N60   G30N60







Part Number G30N60C3D
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel IGBT
Datasheet G30N60 DatasheetG30N60C3D Datasheet (PDF)

www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the deve.

  G30N60   G30N60







Part Number G30N60B3D
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel IGBT
Datasheet G30N60 DatasheetG30N60B3D Datasheet (PDF)

HGTG30N60B3D Data Sheet www.DataSheet4U.com April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170..

  G30N60   G30N60







Part Number G30N60B3
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPT IGBT
Datasheet G30N60 DatasheetG30N60B3 Datasheet (PDF)

HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Features • 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A • Typical Fall Time. . ..

  G30N60   G30N60







Part Number G30N60A4D
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description SMPS Series N-Channel IGBT
Datasheet G30N60 DatasheetG30N60A4D Datasheet (PDF)

HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in a.

  G30N60   G30N60







Fast IGBT

SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type SGP30N60 SGW30N60 VCE IC VCE(sat) Tj Marking Package 600V 30A 2.5V 150°C G30N60 PG-TO-220-3-1 600V 30A 2.5V 150°C G30N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - VGE EAS tSC Ptot Tj , Tstg Ts Value 600 41 30 112 112 ±20 165 Unit V A V mJ 10 250 -55...+150 260 µs W °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov. 09 .


2006-02-03 : FDG192032B    FDG192016A    FDG160160B    FDG160036A    FDG128064H    FDG128064G    FDG128064F    FDG128064D    FDG128064C    FDG128064A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)