www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANN...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/30 REVISED DATE :
G3018
Description Features
N-CHANNEL
MOSFET
BVDSS RDS(ON) ID
30V 8 115mA
N-channel enhancement-mode
MOSFET Low on-resistance. Fast switching speed. Low
voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel.
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 30 20 115 75 800 0.225 0.0018 -40 ~ +150 Ratings 556
Unit V V mA mA mA W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
G3018
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ISSUED DATE :2005/11/30 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown
Voltage Gate Threshold
Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Unless otherwise specified)
Min. 30 0.8 20 Typ. 5 7 Max. 2.0 ±1 1 8 13 50 25 5 pF Unit V V mS uA uA Test Conditi...