G2N7002

G2N7002 Description Package Dimensions 1/3 N-CHANNEL TRANSISTOR N-channel enhancement-mode MOS TRANSISTOR REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp 50us) Continuous Drain Current Pulsed Drain Current (Ta=25 Power Dissipation ) Ta=25 Ta=100 (2) Ta=25 Ta=100 Symbol Tj, Tstg Ratings -55 ~ +150 60 V V V mA mA W /W 20 40 115 73 800 0.2 0.08 625 Unit VGS VGSM (1) (1) ID IDM PD RthJA Thermal Resistance ,Junction-to-Ambient Characteristics Parameter at Ta = 25 Symbol BVDSS VGS(th) IGSS Idss ID(ON) Min. 60 1 500 80 Typ. Max. 2.5 100 1 7.5 13.5 7.5 13.5 50 25 5 mS pF pF pF VDS=25V, VGS =0V, f=1MHz Id=500mA, VGS=10V VDS>2 VDS(ON), ID=200mA Unit V V nA uA mA Test Conditions VGS=0, ID=10uA VDS=2.5V, ID=0.25mA VGS= 20V, VDS=0 VDS=60V, VGS=0 VDS =7.5V ,VGS=10V Id=50mA, VGS =5V 25 125 25 125 Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source on-State Resistance RDS(ON) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance GFS Ciss Coss Crss 2/3 (1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse ...