G2N4401

www.DataSheet4U.com CORPORATION G2N4401 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B The G2N4401 is designed for general purpose switching and amplifier applications. *Complementary to G2N4403 *High Power Dissipation: 625mW at 25 *High DC Current Gain: 100-300 at 150mA *High Breakdown Voltage: 40V Min Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 60 40 5 600 625 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Rank Range at Ta = 25 Min. 60 40 5 750 20 40 80 100 40 250 Typ. A 100-210 Max. 100 400 750 950 1.2 300 6.5 B 190-300 MHz pF Unit V V V nA mV mV mV V IC=100uA IC=1mA IE=10uA VCE=35V, V BE= 0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IB=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC =20mA, f=100MHz VCB=5V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions ...