G2314

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/16 REVISED DATE : G2314 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 75m 3.5A The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2314 is universally used for all commercial-industrial applications. Description *Capable of 2.5V gate drive *Low on-resistance Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 20 12 3.5 2.8 10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2005/05/16 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 20 0.5 Typ. 0.02 7.0 4 0.7 2 6 8 10 3 230 55 40 1.1 Max. 1.2 100 1 10 75 125 7 370 1.7 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=25...