G2306A

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/17 REVISED DATE :2006/07/17C G2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 35m 5A Description The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2306A is universally used for all commercial-industrial applications. *Capable of 2.5V gate drive *Lower on-resistance Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, [email protected] 3 Continuous Drain Current , [email protected] 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Symbol Rthj-a Ratings 30 ±12 5 4 20 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2005/01/17 REVISED DATE :2006/07/17C Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 0.5 Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70 Max. 1.2 ±100 1 25 30 35 50 90 15 1050 pF ns nC m Unit V V/ V S nA uA u...