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G03H1202

High Speed 2-Technology

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IGA03N120H2

HighSpeed 2-Technology
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• •

Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control
G E

P-TO220-3-31 (FullPAK)

P-TO220-3-34 (FullPAK)

• Complete product spectrum and PSpice Models : www.infineon.com/igbt/ Type IGA03N120H2 IGA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150°C 150°C Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654

Maximum Ratings Parameter Collector-emitter voltage TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 °C VGE Ptot ±20 29 V W ICpuls Triangular collector peak current (VGS = 15V) Symbol Value 1200 8.2 9 9 Unit V A

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Power Semiconductors
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1

Mar-04, Rev. 2.0



IGA03N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value Unit

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0 µ A VCE(sat) V G E = 15V, I C = 3A T j = 25 ° C T j = 15 0 ° C V G E = 10V, I C = 3A , T j = 25 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) I C = 90 µ A , V C E = V G E T j = 25 ° C T j = 15 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25V V G E = 0V f = 1 M Hz V C C = 9 60V, I C = 3A V G E = 1 5V P -T O - 2 20- 3- 31 7 nH 205 24 7 8.6 nC pF IGES gfs V C E = 0V , V G E = 2 0V V C E = 20V, I C = 3A I C E S DataSheet4U.com V C E = 1200V, V G E = 0V 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 µA 1200 V Symbol


























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