NPN Low Saturation Transistor
Description
FZT649
Discrete Power & Signal Technologies July 1998
FZT649
C E
B
C
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitt...
Fairchild Semiconductor
FZT649 PDF File
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