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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Power management Dual-transistors
FUMF21N
TRANSISTOR
WBFBP-06C
(2×2×0.5) unit: mm
DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,C.
TRANSISTOR
www.DataSheet.co.kr
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Power management Dual-transistors
FUMF21N
TRANSISTOR
WBFBP-06C
(2×2×0.5) unit: mm
DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)
1
MARKING:F21
F21
TR1 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -15 -12 -6 -0.5 Units V V V A
0.15
150 -55-150
W
℃ ℃
DTR2 Absolute maximum ratings(Ta=25℃) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 50 100 150 150 -55~150 Unit V V mA mW ℃ ℃
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TR1
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test
unless
conditions
otherwise
MIN -15 -12 -6
specified)
TYP MAX UNIT V V V -0.1 -0.1
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Colle.