FTS2002

www.DataSheet4U.com Ordering number:EN5906 N-Channel Silicon MOSFET FTS2002 DC-DC Converter Applications Features · Low ON resistance. · 4V dirve. · Mount height 1.1mm. Package Dimensions unit:mm 2147 3.0 0.975 0.65 [FTS2002] 0.95 8 5 0.5 1 4 0.25 0.125 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 1.2max 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain SANYO:TSSOP8 4.5 0.95 6.4 Ratings 30 ±20 5 30 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=3A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 8 10 24 37 700 380 180 32 50 Conditions Ratings min 30 100 ±10 2.5 typ max Unit V µA µA V S mΩ mΩ pF pF pF Continued on next page. Any and all SANYO products described or conta...