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FSYE430D Datasheet

Part Number FSYE430D
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet FSYE430D DatasheetFSYE430D Datasheet (PDF)

FSYE430D, FSYE430R Data Sheet June 1999 File Number 4750 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh spac.

  FSYE430D   FSYE430D






Part Number FSYE430R
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet FSYE430D DatasheetFSYE430R Datasheet (PDF)

FSYE913A0D, FSYE913A0R Data Sheet February 2000 File Number 4744 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally .

  FSYE430D   FSYE430D







Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE430D, FSYE430R Data Sheet June 1999 File Number 4750 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations.


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