DatasheetsPDF.com

FSYE13A0D Datasheet

Part Number FSYE13A0D
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet FSYE13A0D DatasheetFSYE13A0D Datasheet (PDF)

FSYE13A0D, FSYE13A0R Data Sheet May 1999 File Number 4741 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh spa.

  FSYE13A0D   FSYE13A0D






Part Number FSYE13A0R
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet FSYE13A0D DatasheetFSYE13A0R Datasheet (PDF)

FSYE13A0D, FSYE13A0R Data Sheet May 1999 File Number 4741 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh spa.

  FSYE13A0D   FSYE13A0D







Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE13A0D, FSYE13A0R Data Sheet May 1999 File Number 4741 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviation.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)