FSYC055D, FSYC055R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Description
The Discrete Produc...
FSYC055D, FSYC055R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power
MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened
MOSFETs specifically designed for commercial and military space applications. Enhanced Power
MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a variety of
voltage, current and on-resistance ratings. Numerous packaging options are also available. This
MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The
MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
PART NO./BRAND FSYC055D1 FSYC055D3 FSYC055R1 FSYC055R3 FSYC055R4
D
Features
70A (Note), 60V, rDS(ON) = 0.012Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single E...