FSB649
FSB649
C E B
SuperSOTTM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Colle...
