FS70UMJ-06F
High-Speed Switching Use Nch Power MOS FET
Features
• Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 7...
FS70UMJ-06F
High-Speed Switching Use Nch Power MOS FET
Features
Drive
voltage : 4 V VDSS : 60 V rDS(ON) (max) : 7.0 mΩ ID : 70 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 70 ns
Outline
TO-220
4
2, 4
1
REJ03G0250-0100 Rev.1.00
Aug.20.2004
1. Gate 2. Drain 3. Source 4. Drain
12 3
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source
voltage Gate-source
voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
Ratings 60 ±20 70 280 70 70 280 125
– 55 to +150 – 55 to +150
2.0
Unit V V A A A A A W °C °C g
(Tc = 25°C)
Conditions VGS = 0 V VDS = 0 V
L = 10 µH
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FS70UMJ-06F
Electrical Characteristics
Parameter Drain-source breakdown
voltage ...
