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FS30ASJ-06F Datasheet

Part Number FS30ASJ-06F
Manufacturers Renesas
Logo Renesas
Description N-channel MOSFET
Datasheet FS30ASJ-06F DatasheetFS30ASJ-06F Datasheet (PDF)

FS30ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pu.

  FS30ASJ-06F   FS30ASJ-06F






Part Number FS30ASJ-06
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Datasheet FS30ASJ-06F DatasheetFS30ASJ-06 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 1 2 3 2.6 ± 0.2 w ¡VDSS .... 900V ¡rDS (ON) (MAX) .... 7.3Ω ¡ID . 2A ¡Viso 2000V q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VC.

  FS30ASJ-06F   FS30ASJ-06F







N-channel MOSFET

FS30ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 30 120 30 30 120 50 – 55 to +150 – 55 to +150 0.32 REJ03G0242-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value REJ03G0242-0200 Rev.2.00 Dec 19, 2008 Page 1 of 6 FS30ASJ-06F Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS I.


2016-05-01 : CBR1F-D020S    CBR1F-D040S    CBR1F-D060S    CBR1F-D080S    CBR1F-D100S    CBR2-D020S    CBR2-D040S    CBR2-D060S    CBR2-D080S    CBR2-D100S   


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