MITSUBISHI Nch POWER MOSFET
FS10SM-12
HIGH-SPEED SWITCHING USE
FS10SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4...
MITSUBISHI Nch POWER
MOSFET
FS10SM-12
HIGH-SPEED SWITCHING USE
FS10SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 0.94Ω ¡ID .......................................................................................... 10A
TO-3P
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source
voltage Gate-source
voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 600 ±30 10 30 150 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A W °C °C g
Feb.1999
Typical value
MITSUBISHI Nch POWER
MOSFET
FS10SM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±30 — — 2 — — 4....